Germanium and Silicon Cryogenic Thermistors Semiconductor cryogenic thermistors are employed for measurements of low and ultra-low temperatures. AdSem has developed unique technologies for regulation of low temperature conductivity in Ge and Si. Our unique cryogenic thermistors are fabricated by dislocation doping and/or modified neutron transmutation doping methods. These techniques allow producing cryogenic thermistors for any temperature with the highest sensitivity in any specified temperature range. Our cryogenic thermistors also can be employed for both low-temperature nuclear and infrared bolometers. Low and Ultra Low Temperature Si & Ge Thermistors - Product List   Technical Characteristics:

I. Temperature Range 300K - 77K and 300K - 20K     Three differently doped Germanium Cryogenic Thermistors for 300-77K and 300-20K

II. Helium & Ultra-Low Temperature Range Discovery and implementation of modified neutron doping method allow increasing uniformity of impurity distribution in 5 - 7 times and produce interchangeable thermistors

III. Super Wide Temperature Range Each device actually consists of “two thermistors” in one Ge crystal with formed anisotropic low temperature conductivity in various crystallographic directions: Exponential low temperature conductivity along [111] that provides high thermo sensitivity from 300K to 4.2K (even down to 1 K.) Power temperature dependence of conductivity in (111) ensuring wide working temperature range down to 20mK.